Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers



Cao, Zhongming, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905 and Sandall, Ian ORCID: 0000-0003-3532-0373
(2020) Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-<i>k</i> Dielectric Layers. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67 (10). pp. 4269-4273.

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Abstract

The effectiveness of a range of alternative high-{k} dielectric layers as potential passivation layers for InAs avalanche photodiodes has been investigated. The suppression of surface leakage currents is investigated by analyzing the current-voltage performance of differently sized mesa diodes passivated with each oxide layer. Three potential passivation layers, such as ZnO, Al2O3, and MgO, have been identified, all of which enables the suppression of surface leakage in smaller sized devices of a radius of 50\mu \text{m} and at lower temperatures of 175 K compared to a reference SU8 device. The influence of repeated temperature cycling on these layers has also been investigated with Al2O3 passivated devices, exhibiting no change in performance after multiple cooling and heating cycles.

Item Type: Article
Uncontrolled Keywords: Avalanche photodiodes (APDs), high-k dielectric, InAs, leakage currents
Depositing User: Symplectic Admin
Date Deposited: 04 Aug 2020 09:34
Last Modified: 15 Mar 2024 03:06
DOI: 10.1109/TED.2020.3012122
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3096324

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