Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors



Zhao, Tianshi, Zhao, Chun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Gee Lim, Eng, Yang, Li, Qiu, Chenghu and Zhao, Ce Zhou
(2020) Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020-4-28 - 2020-5-30.

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Abstract

In this work, solution processed zinc tin oxide semiconductor films were investigated. Different from the widely reported high-temperature and toxic organic solvent-based fabrication process, a low temperature and eco-friendly aqueous solvent-based route was studied. The optimization of electrical performances on field effect mobility and reliability was proved. Moreover, a resistor-loaded inverter was constructed.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: Semiconductor devices, Thin film transistors, Current-voltage characteristics, Threshold voltage, Inverters
Depositing User: Symplectic Admin
Date Deposited: 20 Aug 2020 09:09
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/irps45951.2020.9128329
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3098043