GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing

Cao, Zhongming, Ashwin, Mark ORCID: 0000-0001-8657-8097, Veal, Tim ORCID: 0000-0002-0610-5626, Sandall, Ian ORCID: 0000-0003-3532-0373 and IEEE, (2020) GaSbBi metal-semiconductor-metal photodetectors for mid-infrared sensing. In: 2020 IEEE Photonics Conference (IPC), 2020-9-28 - 2020-10-1.

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Abstract

We demonstrate the operation of GaSbBi metal-semiconductor-metal photodetectors with different Bi concentration and compare performance with a reference GaSb device. A GaSbBi MSM-PDs is shown to have a 220 nm wavelength extension in cut-off wavelength, with 2.9% bismuth concentration, compared to the reference device. We also investigate the influences of electrode geometry and size on the final device performance.

Item Type:	Conference or Workshop Item (Unspecified)
Uncontrolled Keywords:	GaSbBi, MSM-PDs, bismuth
Depositing User:	Symplectic Admin
Date Deposited:	05 Mar 2021 09:43
Last Modified:	15 Mar 2024 03:06
DOI:	10.1109/ipc47351.2020.9252225
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3116544