A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage


Zhang, Jinyao, Huang, Yi ORCID: 0000-0001-7774-1024 and Zhou, Jiafeng ORCID: 0000-0001-5829-3932 (2024) A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 71 (2). pp. 547-551. ISSN 1549-7747, 1558-3791

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Abstract

This brief focuses on a highly efficient rectifier based on a high-electron-mobility transistor (HEMT) with a wide dynamic range of input power. Due to the nonlinear characteristics of HEMT, the impedance mismatch at different input power levels is a major challenge in rectifier design. Herein, a variable voltage gate self-bias network is proposed. It can dynamically generate a DC voltage according to the input power level, and continuously provide the optimal bias for the HEMT, thereby improving the RF to DC conversion efficiency in a wide input power range. This design does not require any external sensing or dynamic control circuit. The power needed by the self-bias network is provided using a weak coupling structure placed at the input port, which couples a small amount of the received RF power to operate the self-bias network. It is demonstrated that the proposed rectifier can achieve a dynamic operating power range of 24 dB (from 1 to 25 dBm) for over 60% conversion efficiency, or 16 dB for over 70% conversion efficiency in the measurement.

Item Type: Article
Uncontrolled Keywords: Rectifiers, HEMTs, Logic gates, Couplings, Radio frequency, Voltage measurement, Transmission line measurements, Wireless power transmission, rectifiers, microwave circuits
Depositing User: Symplectic Admin
Date Deposited: 06 Oct 2023 07:27
Last Modified: 23 May 2026 05:42
DOI: 10.1109/TCSII.2023.3313879
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3116676
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