Growth and properties of GaSbBi alloys

Rajpalke, MK, Linhart, WM, Birkett, M ORCID: 0000-0002-6076-6820, Yu, KM, Scanlon, DO, Buckeridge, J, Jones, TS, Ashwin, MJ ORCID: 0000-0001-8657-8097 and Veal, TD ORCID: 0000-0002-0610-5626
(2013) Growth and properties of GaSbBi alloys. APPLIED PHYSICS LETTERS, 103 (14). p. 142106.

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<jats:p>Molecular-beam epitaxy has been used to grow GaSb1−xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that &amp;gt;98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb0.95Bi0.05, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant.</jats:p>

Item Type: Article
Additional Information: ## TULIP Type: Articles/Papers (Journal) ##
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 26 Mar 2021 16:41
Last Modified: 07 Aug 2023 20:00
DOI: 10.1063/1.4824077
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