Fabrication and modelling of MInM diodes with low turn-on voltage

Noureddine, I Nemr, Sedghi, N ORCID: 0000-0002-2004-6159, Wrench, J, Chalker, P ORCID: 0000-0002-2295-6332, Mitrovic, IZ ORCID: 0000-0003-4816-8905 and Hall, S ORCID: 0000-0001-8387-1036
(2021) Fabrication and modelling of MInM diodes with low turn-on voltage. SOLID-STATE ELECTRONICS, 184 (Oct.). p. 108053.

[img] Text
SSE INN et al May 2021.pdf - Author Accepted Manuscript

Download (2MB) | Preview


Multi-stack metal–insulator-metal (MIM) diodes of ultra-thin Ta2O5/Al2O3 dielectrics are investigated by experiment and modelling. Tunnelling transport is modelled using transfer matrix (TMM) and Wentzel-Kramers-Brillouin (WKB) methods. Rectification for a triple dielectric layer device is shown to occur at a turn-on voltage (VON) as low as 170 mV with a non-linearity of 3 and an asymmetry increasing from 2.2 at the VON to over two orders of magnitude at 1 V.

Item Type: Article
Uncontrolled Keywords: Multi-dielectric diode, Native oxide, Tunnelling, Tsu-Esaki model, Transfer matrix method, WKB approximation, Ultra-high speed rectification, Rectenna
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 28 May 2021 08:30
Last Modified: 18 Jan 2023 22:37
DOI: 10.1016/j.sse.2021.108053
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3124327