Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers



Shen, Zongjie, Zhao, Chun, Zhao, Tianshi, Xu, Wangying, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials, 3 (3). 1288 - 1300.

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Shen et al-ACS AMI final accepted version.docx - Accepted Version

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Item Type: Article
Uncontrolled Keywords: synaptic behavior, resistive switching, stacked layers, solution-processed RRAM, image recognition
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 02 Jun 2021 15:14
Last Modified: 11 Sep 2022 02:11
DOI: 10.1021/acsaelm.0c01094
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3124903