Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers



Shen, Zongjie, Zhao, Chun, Zhao, Tianshi, Xu, Wangying, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-Processed Switching Layers. ACS Applied Electronic Materials, 3 (3). pp. 1288-1300.

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Abstract

As one of the promising next-generation electronics, brain-inspired synaptic resistive random access memory (RRAM) devices with stacked solution-processed (SP) spin-coated resistive switching (RS) layers were fabricated in this work. Compared with the RRAM device with a single SP-RS layer (Ag/SP-AlOx/ITO), the device with stacked SP-RS layers (Ag/SP-GaOx/SP-AlOx/ITO) is induced by the metal conductive filament performed with lower power consumption (∼±0.6 V operation voltage), larger read and write capability (∼2 × 104 ON/OFF ratio), and enhanced stability (>2 × 104 s retention time and >1000 endurance cycles). Multiple conductance states with long-term potentiation and depression (200 pulses) were obtained on Ag/SP-GaOx/SP-AlOx/ITO RRAM devices, which resulted in the human brain-like behavior (learning-forgetting-relearning) of a matrix comprising of RRAM devices with SP-GaOx/SP-AlOx layers. Based on the synaptic performance of Ag/SP-GaOx/SP-AlOx/ITO RRAM devices, an image recognition process based on a neuron network was conducted and the average recognition accuracy was close to 90%.

Item Type: Article
Uncontrolled Keywords: synaptic behavior, resistive switching, stacked layers, solution-processed RRAM, image recognition
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 02 Jun 2021 15:14
Last Modified: 18 Jan 2023 22:36
DOI: 10.1021/acsaelm.0c01094
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3124903