Massabuau, FCP, Roberts, JW, Nicol, D, Edwards, PR, McLelland, M, Dallas, GL, Hunter, DA, Nicolson, EA, Jarman, JC, Kovacs, A et al (show 3 more authors)
(2021)
Progress in atomic layer deposited α-Ga2O3materials and solar-blind detectors
In: Oxide-based Materials and Devices XII, 2021-3-6 - 2021-3-12.
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Abstract
Atomic layer deposition (ALD) offers a low thermal budget method for producing α-Ga<inf>2</inf>O<inf>3</inf>films on sapphire substrate. In this paper we review the recent progress on plasma-enhanced ALD growth of α-Ga<inf>2</inf>O<inf>3</inf>and present the optical and photoconductive properties of the deposited films. We show that the deposited material exhibits an epitaxial relationship with the sapphire substrate, and with an atomically sharp film-substrate interface. The α-Ga<inf>2</inf>O<inf>3</inf>films had an optical bandgap energy measured at 5.11 eV, and exhibited a broad luminescence spectrum dominated by ultraviolet, blue and green bands, in line with current literature. We finally demonstrate the suitability of the material for solar-blind photodetection.
| Item Type: | Conference Item (Unspecified) |
|---|---|
| Uncontrolled Keywords: | 40 Engineering, 4016 Materials Engineering, 51 Physical Sciences |
| Divisions: | Faculty of Science & Engineering > School of Engineering |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 25 Jun 2021 08:43 |
| Last Modified: | 21 Jan 2026 20:55 |
| DOI: | 10.1117/12.2588729 |
| Related Websites: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3127667 |
| Disclaimer: | The University of Liverpool is not responsible for content contained on other websites from links within repository metadata. Please contact us if you notice anything that appears incorrect or inappropriate. |
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