Annealing and Treatment Effects on Se Diffusion in CdTe Photovoltaics



Leaver, Jacob F, Durose, Ken ORCID: 0000-0003-1183-3211, Major, Jonathan D ORCID: 0000-0002-5554-1985 and IEEE,
(2021) Annealing and Treatment Effects on Se Diffusion in CdTe Photovoltaics. In: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), 2021-6-20 - 2021-6-25.

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Abstract

The interdiffusion of CdTe and CdSe at the window layer interface to form alloyed CdSexTe1-x (CST) layers has been shown to improve the efficiency of CdTe photovoltaic devices, and there is evidence from the literature that Se passivates defects in these devices, particularly at grain boundaries. This work investigates the importance of the Cl treatment by comparing untreated, air-annealed and Cl treated CST devices to determine whether the Cl treatment is required for CST devices. We show that the Cl treatment increases Se diffusion and is still necessary for efficient CST devices, although it is not clear whether the efficiency gains are due to the effects of greater Se diffusion or the usual benefits of the Cl treatment on CdTe photovoltaics.

Item Type: Conference or Workshop Item (Unspecified)
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 20 Oct 2021 13:37
Last Modified: 18 Jan 2023 21:26
DOI: 10.1109/PVSC43889.2021.9518821
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3141043