Performance variation of solution-processed memristor induced by different top electrode



Shen, Zongjie, Zhao, Chun, Liu, Yina, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Cezhou
(2021) Performance variation of solution-processed memristor induced by different top electrode. SOLID-STATE ELECTRONICS, 186.

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Shen et al-Solid State Electronic-Dec2021-final accepted version.docx - Accepted Version

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Item Type: Article
Uncontrolled Keywords: Solution-processed, Work function difference, RRAM
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 26 Jan 2022 11:28
Last Modified: 06 Sep 2022 10:56
DOI: 10.1016/j.sse.2021.108132
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3147619