High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas



Zhao, Tianshi, Liu, Chenguang, Zhao, Chun, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou
(2021) High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas. JOURNAL OF MATERIALS CHEMISTRY A, 9 (32). 17390 - 17399.

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Journal of Materials and Chemistry A-Zhao et al-2021.docx - Accepted Version

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Item Type: Article
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 28 Jan 2022 11:04
Last Modified: 10 Sep 2022 17:22
DOI: 10.1039/d1ta01355f
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3147762