High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas

Zhao, Tianshi, Liu, Chenguang, Zhao, Chun, Xu, Wangying, Liu, Yina, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Lim, Eng Gee, Yang, Li ORCID: 0000-0002-1040-4223 and Zhao, Ce Zhou (2021) High-performance solution-processed Ti3C2Tx MXene doped ZnSnO thin-film transistors via the formation of a two-dimensional electron gas. JOURNAL OF MATERIALS CHEMISTRY A, 9 (32). pp. 17390-17399.

Text Journal of Materials and Chemistry A-Zhao et al-2021.docx - Author Accepted Manuscript Download (11MB)

Abstract

<jats:p>The optimization of solution-processed ZTO TFTs was successfully realized by fabricating a channel layer into a homojunction structure (MXene doped ZTO/ZTO) to form a 2DEG. The device shows excellent electrical performance with a maximum annealing temperature of ≤300 °C.</jats:p>

Item Type:	Article
Divisions:	Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science Faculty of Science and Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	28 Jan 2022 11:04
Last Modified:	18 Jan 2023 21:14
DOI:	10.1039/d1ta01355f
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3147762