Development of RD50-MPW2: A high-speed monolithic HV-CMOS prototype chip within the CERN-RD50 collaboration

Zhang, C ORCID: 0000-0001-6135-3131, Casse, G ORCID: 0000-0002-8516-237X, Massari, N, Vilella, E and Vossebeld, J (2019) Development of RD50-MPW2: A high-speed monolithic HV-CMOS prototype chip within the CERN-RD50 collaboration In: Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2019), 2019-9-2 - ?.

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Abstract

The CERN-RD50 collaboration has ongoing research to further develop monolithic High Voltage-CMOS (HV-CMOS) sensors in a 150 nm process for future particle physics experiments. As a part of this research programme, a test chip (RD50-MPW2) that implements new methodologies for low leakage current and fast and low-noise readout circuitry has been designed and submitted for fabrication. This article presents the design details and simulation results of the 8 × 8 matrix of high-speed monolithic HV-CMOS pixels included in RD50-MPW2, in which two flavours of fast pixels are implemented: a conventional continuous-reset pixel and a switched-reset pixel with a novel asynchronous switched-reset scheme.

Item Type:	Conference Item (Unspecified)
Uncontrolled Keywords:	40 Engineering, 4008 Electrical Engineering, Bioengineering
Divisions:	Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	04 Feb 2022 10:18
Last Modified:	22 May 2026 15:59
DOI:	10.22323/1.370.0045
Related Websites:	Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3148192
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