E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure

Franks, M, Casse, G ORCID: 0000-0002-8516-237X, Mandic, I, Powell, S, Vilella, E, Vossebeld, J and Wonsak, S ORCID: 0000-0001-6122-2086 (2021) E-TCT characterization of a thinned, backside biased, irradiated HV-CMOS pixel test structure NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 991. 164949-. ISSN 0168-9002, 1872-9576

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Abstract

This paper presents the results of edge-Transient Current Technique (e-TCT) measurements of a test structure of a High Voltage CMOS (HV-CMOS) pixel demonstrator, the H35DEMO. Several high resistivity (1000 Ω⋅cm) samples of the device were thinned to 100μm, processed for backside biasing, and irradiated with neutrons to fluences up to 2⋅10¹⁶n<inf>eq</inf>⋅cm⁻². The evolution of effective doping concentration with respect to fluence is studied. Samples irradiated to a fluence of 5⋅10¹⁴n<inf>eq</inf>⋅cm⁻² are fully depleted beyond −50V substrate bias voltage while samples irradiated to the highest fluence reach 30 μm depletion at −200V.

Item Type:	Article
Uncontrolled Keywords:	Particle detector, CMOS, HV-CMOS, e-TCT
Divisions:	Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	04 Feb 2022 10:16
Last Modified:	23 May 2026 05:35
DOI:	10.1016/j.nima.2020.164949
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3148193
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