High-Voltage CMOS Active Pixel Sensor

Peric, Ivan, Andreazza, Attilio, Augustin, Heiko, Barbero, Marlon, Benoit, Mathieu, Casanova, Raimon, Ehrler, Felix, Iacobucci, Giuseppe, Leys, Richard, Gonzalez, Annie Meneses
et al (show 9 more authors) (2021) High-Voltage CMOS Active Pixel Sensor. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 56 (8). pp. 2488-2502.

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The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 $\mu \text{m}$ can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm2 large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization.

Item Type: Article
Uncontrolled Keywords: Active pixel sensors, ionizing radiation sensors, particle beam measurements, particle tracking, position-sensitive
Divisions: Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 08 Mar 2022 17:08
Last Modified: 17 Mar 2024 11:37
DOI: 10.1109/JSSC.2021.3061760
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3150374