Mandic, I, Cindro, V, Debevc, J, Gorisek, A, Hiti, B, Kramberger, G, Skomina, P, Zavrtanik, M, Mikuz, M, Vilella, E et al (show 5 more authors)
(2022)
Study of neutron irradiation effects in Depleted CMOS detector structures
JOURNAL OF INSTRUMENTATION, 17 (3).
p03030-.
ISSN 1748-0221, 1748-0221
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Text
2112.10738_preprint.pdf - Published version Download (2MB) | Preview |
Abstract
In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 kωcm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2·1015 neq/cm2. The depletion depth was measured with Edge-TCT. The effective space charge concentration Neff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of Neff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of Neff and detector current up to 1280 minutes at 60°C was made. It was found that Neff and current in reverse biased detector behave as expected for irradiated silicon.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Particle tracking detectors (Solid-state detectors), Si microstrip and pad detectors, Solid state detectors |
| Divisions: | Faculty of Science & Engineering > School of Physical Sciences |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 07 Apr 2022 13:19 |
| Last Modified: | 16 Jun 2026 15:02 |
| DOI: | 10.1088/1748-0221/17/03/P03030 |
| Related Websites: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3152364 |
| Disclaimer: | The University of Liverpool is not responsible for content contained on other websites from links within repository metadata. Please contact us if you notice anything that appears incorrect or inappropriate. |
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