Band Structure Engineering of Bi4O4SeCl2 for Thermoelectric Applications



Newnham, Jon A, Zhao, Tianqi, Gibson, Quinn D, Manning, Troy D ORCID: 0000-0002-7624-4306, Zanella, Marco ORCID: 0000-0002-6164-6169, Mariani, Elisabetta ORCID: 0000-0002-0585-5265, Daniels, Luke M ORCID: 0000-0002-7077-6125, Alaria, Jonathan ORCID: 0000-0001-5868-0318, Claridge, John B ORCID: 0000-0003-4849-6714, Cora, Furio
et al (show 1 more authors) (2022) Band Structure Engineering of Bi4O4SeCl2 for Thermoelectric Applications ACS ORGANIC & INORGANIC AU, 2 (5). pp. 405-414. ISSN 2694-247X, 2694-247X

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Abstract

The mixed anion material Bi<inf>4</inf>O<inf>4</inf>SeCl<inf>2</inf> has an ultralow thermal conductivity of 0.1 W m-1 K-1 along its stacking axis (c axis) at room temperature, which makes it an ideal candidate for electronic band structure optimization via doping to improve its thermoelectric performance. Here, we design and realize an optimal doping strategy for Bi<inf>4</inf>O<inf>4</inf>SeCl<inf>2</inf> from first principles and predict an enhancement in the density of states at the Fermi level of the material upon Sn and Ge doping. Experimental work realizes the as-predicted behavior in Bi<inf>4-x</inf>Sn<inf>x</inf>O<inf>4</inf>SeCl<inf>2</inf> (x = 0.01) through the precise control of composition. Careful consideration of multiple accessible dopant sites and charge states allows for the effective computational screening of dopants for thermoelectric properties in Bi<inf>4</inf>O<inf>4</inf>SeCl<inf>2</inf> and may be a suitable route for assessing other candidate materials.

Item Type: Article
Uncontrolled Keywords: thermoelectric, electronic structure, doping, screening, multianion, disproportionate, Bi4O4SeCl2
Divisions: Faculty of Science & Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 13 Sep 2022 13:22
Last Modified: 16 Jun 2026 14:05
DOI: 10.1021/acsorginorgau.2c00018
Open Access URL: https://doi.org/10.1021/acsorginorgau.2c00018
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3164534
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