Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance

Wade, B, Franks, M, Hammerich, J, Karim, N, Powell, S, Vilella, E and Zhang, C ORCID: 0000-0001-6135-3131 (2022) Edge-TCT evaluation of high voltage-CMOS test structures with unprecedented breakdown voltage for high radiation tolerance .

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Abstract

This paper presents the edge Transient Current Technique (eTCT) measurements of passive test-structures on the UKRI-MPW0 pixel chip, a 280 µm thick proof-of-concept High Voltage-CMOS (HV-CMOS) device designed and fabricated in the LFoundry 150 nm technology node with a nominal substrate resistivity of 1.9 kΩ cm. Samples were irradiated up to 1 × 10¹⁶ 1 MeV n<inf>eq</inf> cm⁻² with neutrons to observe the change in depletion depth and effective doping concentration with irradiation. A depletion depth of the sensor was found to be ≈50 µm at ≈−400 V at 1 × 10¹⁶ 1 MeV n<inf>eq</inf> cm⁻². A stable damage introduction rate (g <inf>c</inf>) was also calculated to be 0.011 ± 0.002 cm⁻¹

Item Type:	Conference Item (Unspecified)
Uncontrolled Keywords:	Particle tracking detectors (Solid-state detectors), Photon detectors for UV, visibleand IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs,CMOS imagers, etc.), Radiation-hard detectors, Solid state detectors
Divisions:	Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	10 Jan 2023 16:16
Last Modified:	16 Jun 2026 15:33
DOI:	10.1088/1748-0221/17/12/C12017
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3166976
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