Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process

Powell, S, Hammerich, J ORCID: 0000-0002-5556-1775, Karim, N, Vilella, E and Zhang, C ORCID: 0000-0001-6135-3131 (2023) Design and preliminary results of a shunt voltage regulator for a HV-CMOS sensor in a 150 nm process Journal of Instrumentation, 18 (01). C01009-C01009. ISSN 1748-0221, 1748-0221

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Abstract

Abstract This paper presents the design and preliminary results of a shunt voltage regulator and two different bandgap reference designs for use with a monolithic High Voltage CMOS (HV-CMOS) sensor in a 150 nm technology node. One bandgap reference design is based on Bipolar Junction Transistors (BJTs) as the reference element of the circuit — the rest of the circuit is entirely designed with Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs). The second bandgap reference design makes use of MOSFETs exclusively.

Item Type:	Article
Uncontrolled Keywords:	Particle tracking detectors, Radiation-hard detectors, Solid state detectors
Divisions:	Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	11 Jan 2023 12:21
Last Modified:	01 Mar 2026 11:48
DOI:	10.1088/1748-0221/18/01/c01009
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3166996
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