Argon ion laser modified and monitored growth ofIII-V semiconductors by chemical beam epitaxy


Boyd, Adam Robert (1996) Argon ion laser modified and monitored growth ofIII-V semiconductors by chemical beam epitaxy. PhD thesis, University of Liverpool.

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Item Type: Thesis (PhD)
Uncontrolled Keywords: Physics
Depositing User: Symplectic Admin
Date Deposited: 20 Jan 2023 11:38
Last Modified: 20 Jan 2023 12:51
DOI: 10.17638/03167508
Copyright Statement: Copyright © and Moral Rights for this thesis and any accompanying data (where applicable) are retained by the author and/or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge.
Digitisation Notes : 7 unnumbered pages before page 1. Unnumbered page between page 26-27. 2 unnumbered pages between pages 45-46. 4 unnumbered pages between pages 64-65. 18 unnumbered pages between pages 91-92. 12 unnumbered pages between pages 119-120. No pagination after page 126.
URI: https://livrepository.liverpool.ac.uk/id/eprint/3167508
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