Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3

Nicol, D, Oshima, Y, Roberts, JW, Penman, L, Cameron, D, Chalker, PR ORCID: 0000-0002-2295-6332, Martin, RW and Massabuau, FC-P (2023) Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3. APPLIED PHYSICS LETTERS, 122 (6). 062102-. ISSN 0003-6951, 1077-3118

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Official URL: https://doi.org/10.1063/5.0135103

Abstract

<jats:p>Temperature-dependent photoluminescence was used to investigate the impact of H on the optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy. An additional UV luminescence line centered at 3.8 eV is observed at low temperatures, which strongly correlates with the concentration of H in the films. This luminescence line is assigned to donor–acceptor pair recombination involving an H-related shallow donor and H-decorated Ga vacancy (VGa-nH) as the acceptor, where n = 1, 2, 3. Previous reports have already suggested the impact of H on the electrical properties of Ga2O3, and the present study shows its clear impact on the optical properties of α-Ga2O3.</jats:p>

Item Type:	Article
Uncontrolled Keywords:	40 Engineering, 4016 Materials Engineering
Divisions:	Faculty of Science and Engineering > School of Engineering
Depositing User:	Symplectic Admin
Date Deposited:	07 Feb 2023 14:42
Last Modified:	07 Dec 2024 23:34
DOI:	10.1063/5.0135103
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3168255