A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits

Li, Ang, Shen, Yi, Li, Ziqian, Li, Fan, Sun, Ruize, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Wen, Huiqing, Lam, Sang and Liu, Wen
(2022) A 4-Transistor Monolithic Solution to Highly Linear On-Chip Temperature Sensing in GaN Power Integrated Circuits. IEEE Electron Device Letters, 44 (2). pp. 333-336.

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We report the monolithic realization of on-chip temperature sensing design using four transistors (4T) in gallium nitride (GaN) technology. The temperature sensor consists of a voltage reference and a logic inverter, both of which are built from enhancement-mode (E-mode) and depletion-mode (D-mode) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The temperature-insensitive voltage reference outputs a very stable voltage as the input of the logic inverter, which exhibits good temperature dependence in its voltage transfer characteristics. As the temperature varies from 25 to 250 °C, the output voltage of the logic inverter changes linearly. By configuring the active-load D-mode transistor as a two-dimensional electron gas (2DEG) resistor in the logic inverter, the temperature sensing solution is improved further, showing stable sensing output, higher sensitivity (31.28 mV/°C), better linearity ( R2 = 0.995) and smaller error (±2.74 °C). This demonstrates a compact monolithic sensor for monitoring the on-chip temperature of GaN power integrated circuits (ICs) for protection and control.

Item Type: Article
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Uncontrolled Keywords: AlGaN/GaN, MIS-HEMT, monolithic integration, temperature sensor
Divisions: Faculty of Science and Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 12 Apr 2023 09:11
Last Modified: 12 May 2023 16:37
DOI: 10.1109/led.2022.3226684
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3169536