Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>

Massabuau, Fabien C-P, Adams, Francesca, Nicol, David, Jarman, John C, Frentrup, Martin, Roberts, Joseph W, O'Hanlon, Thomas J, Kovacs, Andras, Chalker, Paul R ORCID: 0000-0002-2295-6332 and Oliver, RA
(2023) Ni/Au contacts to corundum <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>. JAPANESE JOURNAL OF APPLIED PHYSICS, 62 (SF). SF1008-SF1008.

Access the full-text of this item by clicking on the Open Access link.


<jats:title>Abstract</jats:title> <jats:p>The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited <jats:italic>α</jats:italic>-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> were investigated. Ni forms a Schottky contact with <jats:italic>α</jats:italic>-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni–Au bilayer dominate the electrical properties. It is found that 400 °C–450 °C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.</jats:p>

Item Type: Article
Uncontrolled Keywords: Ga2O3, corundum, metal contact, Schottky, transmission electron microscopy
Divisions: Faculty of Science and Engineering > School of Engineering
Depositing User: Symplectic Admin
Date Deposited: 15 May 2023 10:35
Last Modified: 18 Oct 2023 09:25
DOI: 10.35848/1347-4065/acbc28
Open Access URL:
Related URLs: