Wang, Jiayou, Huang, Yi 
ORCID: 0000-0001-7774-1024, Chang, Yin-Cheng, Liu, Yeke, Chang, Da-Chiang and Hsu, Shawn SH
(2023)
A $K$-Band MMIC Cross-Coupled Oscillator With High Output Power in 0.25-$\mu $m GaN HEMT
IEEE Microwave and Wireless Technology Letters, 33 (8).
pp. 1-4.
ISSN 2771-957X, 2771-9588
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A_K_-Band_MMIC_Cross-Coupled_Oscillator_With_High_Output_Power_in_0.25-_mu__m_GaN_HEMT.pdf - Author Accepted Manuscript Download (787kB) | Preview |
Abstract
In this letter, a monolithic microwave integrated circuit (MMIC) cross-coupled oscillator with high operating frequency and high output power is proposed using 0.25-µm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The coupling capacitors in the core circuit are analyzed to obtain high output power with a suitable tank inductor. The π-type matching network is adopted to effectively extract the fundamental output signal. Also, a flip-transistor layout with a shared back via is proposed for reduced interconnect loss and a compact layout. With a chip area of only 0.71 mm2, the measured results demonstrate a maximum output power of 16 dBm at 24.3 GHz, and a phase noise (PN) of −137.9 dBc/Hz at a 10-MHz offset.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Gallium nitride (GaN), high electron mobility transistor (HEMT), K-band, monolithic microwave integrated circuit (MMIC), oscillator |
| Divisions: | Faculty of Science & Engineering > School of Electrical Engineering, Electronics and Computer Science |
| Depositing User: | Symplectic Admin |
| Date Deposited: | 30 May 2023 08:45 |
| Last Modified: | 28 Feb 2026 23:45 |
| DOI: | 10.1109/lmwt.2023.3271989 |
| Related Websites: | |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3170726 |
| Disclaimer: | The University of Liverpool is not responsible for content contained on other websites from links within repository metadata. Please contact us if you notice anything that appears incorrect or inappropriate. |
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