Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance

Zhang, C ORCID: 0000-0001-6135-3131, Hammerich, J, Powell, S, Vilella, E and Wade, B (2024) Measurement of UKRI-MPW0 after irradiation: an HV-CMOS prototype for high radiation tolerance JOURNAL OF INSTRUMENTATION, 19 (3). c03061-. ISSN 1748-0221, 1748-0221

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Abstract

UKRI-MPW0 was developed to further improve the radiation tolerance of HV-CMOS pixel sensors. It implements a novel sensor cross-section that uses backside-only biasing to allow high substrate bias voltages > 600 V. In this contribution, the measured results of irradiated UKRI-MPW0 samples are presented, including their current-to-voltage (I-V) characteristics, depletion depth and pixel performance. The chip is proved to have survived high radiation fluence of 3 × 10¹⁵ n<inf>eq</inf>/cm²

Item Type:	Article
Uncontrolled Keywords:	Particle tracking detectors (Solid-state detectors), Radiation-hard detectors
Divisions:	Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	03 Apr 2024 14:19
Last Modified:	16 Jun 2026 16:57
DOI:	10.1088/1748-0221/19/03/C03061
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3180038
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