Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond



Mitrovic, Ivona Z and Hall, Stephen
(2009) Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond. Journal of Telecommunications and Information Technology (4). p. 560.

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Abstract

<jats:p>Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted.</jats:p>

Item Type: Article
Uncontrolled Keywords: 4006 Communications Engineering, 40 Engineering
Depositing User: Symplectic Admin
Date Deposited: 18 Jul 2024 07:09
Last Modified: 26 Jul 2024 04:13
DOI: 10.26636/jtit.2009.4.969
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3182976