Mitrovic, Ivona Z and Hall, Stephen
(2009)
Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond.
Journal of Telecommunications and Information Technology (4).
p. 560.
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JTITno4_2009_pp51-60.pdf - Author Accepted Manuscript Download (1MB) | Preview |
Abstract
<jats:p>Over the last decade there has been a significant amount of research dedicated to finding a suitable high-k/metal gate stack to replace conventional SiON/poly-Si electrodes. Materials innovations and dedicated engineering work has enabled the transition from research lab to 300 mm production a reality, thereby making high-k/metal gate technology a pathway for continued transistor scaling. In this paper, we will present current status and trends in rare earthbased materials innovations; in particular Gd-based, for the high-k/metal gate technology in the 22 nm node. Key issues and challenges for the 22 nm node and beyond are also highlighted.</jats:p>
Item Type: | Article |
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Uncontrolled Keywords: | 4006 Communications Engineering, 40 Engineering |
Depositing User: | Symplectic Admin |
Date Deposited: | 18 Jul 2024 07:09 |
Last Modified: | 26 Jul 2024 04:13 |
DOI: | 10.26636/jtit.2009.4.969 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3182976 |