Evaluation and simulation of high voltage-CMOS chips for high radiation environments

Wade, Benjamin, Hammerich, Jan, Powell, Samuel, Vilella, Eva and Zhang, Chenfan ORCID: 0000-0001-6135-3131 (2024) Evaluation and simulation of high voltage-CMOS chips for high radiation environments Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1066. p. 169630. ISSN 0168-9002, 1872-9576

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Abstract

Soon to be delivered, the UKRI-MPW1 is a new High Voltage-Complimentary Metal Oxide Semiconductor (HV-CMOS) prototype chip designed to increase the radiation tolerance of the technology to meet the demands of future experiments. The design seeks to do this through backside biasing and increased breakdown voltage (Vbd) (a predicted 1000 V according to simulation). The chip, designed in the LFoundry 150 nm node, has a 3.0 kΩ cm high resistivity p-type substrate, a Voltage Terminating ring Scheme (VTS), and a new novel low dose p-shield layer, jointly designed with LFoundry. Presented here are the TCAD simulations used to optimise the design of the new layer for an unirradiated sensor.

Item Type:	Article
Uncontrolled Keywords:	HV-CMOS, TCAD, Radiation tolerant, NIEL, UKRI-MPW0, UKRI-MPW1, P-shield, VTS
Depositing User:	Symplectic Admin
Date Deposited:	30 Jul 2024 16:06
Last Modified:	23 May 2026 08:59
DOI:	10.1016/j.nima.2024.169630
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3183243
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