Zhao, Si Ping
(1993)
Hot electron induced degradation in VLSI MOS devices.
PhD thesis, University of Liverpool.
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| Item Type: | Thesis (PhD) |
|---|---|
| Depositing User: | Symplectic Admin |
| Date Deposited: | 23 Oct 2024 06:38 |
| Last Modified: | 23 Oct 2024 09:02 |
| DOI: | 10.17638/03186067 |
| Copyright Statement: | Copyright © and Moral Rights for this thesis and any accompanying data (where applicable) are retained by the author and/or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. |
| URI: | https://livrepository.liverpool.ac.uk/id/eprint/3186067 |
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