Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD


Yu, Xiaochen, Lin, Ya-Xun, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Hall, Steve ORCID: 0000-0001-8387-1036, Liang, Jenq-Horng, Chao, Der-Sheng, Liu, Minzhang, Yang, Xiantao, Huang, Yi ORCID: 0000-0001-7774-1024, Yen, Ta-Jen et al (show 1 more authors) (2024) Sensitive Microwave Rectifier for High-Power Wireless Transfer Based on Ultra-Low Turn-On Voltage Quasi-Vertical GaN SBD IEEE OPEN JOURNAL OF POWER ELECTRONICS, 5. pp. 1756-1766. ISSN 2644-1314, 2644-1314

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Abstract

This paper presents the theoretical analysis and experimental validation of a harmonic-terminated high-efficiency and high-power microwave rectifier. The rectifier is designed utilizing a single-circuit gallium nitride (GaN) quasi-vertical Schottky barrier diode (SBD). Capitalizing on the strengths of wide bandgap, high mobility and high saturation velocity of the GaN, the SBD achieved a high breakdown voltage of 180 V and an ultra-low turn-on voltage of 0.23 V (at 1 A/cm2). These characteristics enhance rectification performance across both high and low input power regions, making it suitable for wireless power transfer (WPT) applications. The optimized high-power microwave rectifier incorporates this advanced diode, featuring a wide input power range and high efficiency. The proposed rectifier structure includes a single-shunt self-developed SBD and topology with a harmonics compression network. It accomplishes a maximum RF-to-DC power conversion efficiency of 70.4% with an input power of 42 dBm (15.8 W) at 0.9 GHz. The highest efficient power handling ability is up to 20 W with an 18 dB (25–43 dBm) dynamic range achieving an efficiency exceeding 50%, demonstrating the high potential of high-power GaN SBDs for wireless high-power transfer for future microwave WPT applications.

Item Type: Article
Uncontrolled Keywords: Wireless power transfer, microwave rectifier, GaN, Schottky barrier diode, high-power, Wireless power transfer, microwave rectifier, GaN, Schottky barrier diode, high-power
Divisions: Faculty of Science & Engineering
Faculty of Science & Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User: Symplectic Admin
Date Deposited: 07 Nov 2024 13:47
Last Modified: 23 May 2026 09:28
DOI: 10.1109/OJPEL.2024.3490614
Open Access URL: https://ieeexplore.ieee.org/document/10744557
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3187104
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