Fast Mg-ion insertion kinetics in V<sub>2</sub>Se<sub>9</sub>



Wright, Matthew A ORCID: 0000-0003-0617-3992, Lim, Jungwoo, Pacheco Muino, Raul A, Krowitz, Anna E, Hawkins, Cara J, Bahri, Mounib ORCID: 0000-0002-8336-9158, Daniels, Luke M ORCID: 0000-0002-7077-6125, Chen, Ruiyong ORCID: 0000-0002-5340-248X, Gomes Chagas, Luciana, Cookson, James
et al (show 6 more authors) (2024) Fast Mg-ion insertion kinetics in V<sub>2</sub>Se<sub>9</sub>. Journal of Materials Chemistry A, 12 (46). pp. 32349-32358. ISSN 2050-7488, 2050-7496

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Abstract

<jats:p>V<jats:sub>2</jats:sub>Se<jats:sub>9</jats:sub> demonstrates reversible Mg<jats:sup>2+</jats:sup> insertion (up to 1.6/unit) with fast kinetics enabled by low diffusion barriers and structural strain facilitated by low charge density (Se<jats:sub>2</jats:sub>)<jats:sup>2−</jats:sup>/Se<jats:sup>2−</jats:sup> anions, providing insight into future material design.</jats:p>

Item Type: Article
Uncontrolled Keywords: 40 Engineering, 4016 Materials Engineering, 34 Chemical Sciences, 3406 Physical Chemistry
Divisions: Faculty of Science and Engineering
Faculty of Science and Engineering > School of Engineering
Faculty of Science and Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 12 Nov 2024 10:58
Last Modified: 14 Dec 2024 09:43
DOI: 10.1039/d4ta04469j
Open Access URL: https://pubs.rsc.org/en/content/articlelanding/202...
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3187284