Defects at the Si-SiO2 interface as determined by charge pumping and spin dependent recombination


Chappel, David Christopher (2003) Defects at the Si-SiO2 interface as determined by charge pumping and spin dependent recombination. PhD thesis, University of Liverpool.

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Item Type: Thesis (PhD)
Depositing User: Symplectic Admin
Date Deposited: 12 Nov 2024 17:15
Last Modified: 12 Nov 2024 18:07
DOI: 10.17638/03187660
Copyright Statement: Copyright © and Moral Rights for this thesis and any accompanying data (where applicable) are retained by the author and/or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge.
Digitisation Notes : Defects at the Si-SiO2 interface as determined by charge pumping and spin dependent recombination, University of Liverpool. Paginaton: Pagination starts/ends at [1-118]; Text cut on Physical [img 0127 to 0136].
URI: https://livrepository.liverpool.ac.uk/id/eprint/3187660
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