Design and evaluation of UKRI-MPW0: a monolithic HV-CMOS pixel sensor with backside biasing

Zhang, C ORCID: 0000-0001-6135-3131, Hammerich, J, Powell, S, Vilella, E and Wade, B (2024) Design and evaluation of UKRI-MPW0: a monolithic HV-CMOS pixel sensor with backside biasing JOURNAL OF INSTRUMENTATION, 19 (11). p11011-. ISSN 1748-0221, 1748-0221

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Abstract

High-Voltage CMOS (HV-CMOS) pixel sensor technology is the most promising route for achieving thin, monolithic pixel detectors with excellent radiation tolerance, as required by future tracking applications in physics experiments, such as the High Luminosity LHC. This paper introduces a U.K. Research and Innovation funded Multi-Project Wafer prototype chip UKRI-MPW0, which is an HV-CMOS pixel sensor designed to push the performance parameters of these detectors. Having a novel sensor cross-section optimised for backside biasing to unprecedented high voltages, UKRI-MPW0 demonstrates the capability to withstand bias voltages of up to 600 V, surpassing the current state-of-the-art and promising enhanced radiation tolerance. The paper provides a detailed description of the design and performance evaluation results of UKRI-MPW0.

Item Type:	Article
Uncontrolled Keywords:	Radiation-hard detectors, Solid state detectors
Divisions:	Faculty of Science & Engineering Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	15 Nov 2024 16:58
Last Modified:	16 Jun 2026 16:57
DOI:	10.1088/1748-0221/19/11/P11011
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3188043
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