Design and evaluation of UKRI-MPW1: a monolithic HV-CMOS pixel sensor with high radiation tolerance

Zhang, C ORCID: 0000-0001-6135-3131, Hammerich, J, Powell, S, Vilella, E and Wade, B (2025) Design and evaluation of UKRI-MPW1: a monolithic HV-CMOS pixel sensor with high radiation tolerance Journal of Instrumentation, 20 (01). C01008-C01008. ISSN 1748-0221, 1748-0221

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Abstract

Abstract A monolithic High Voltage CMOS (HV-CMOS) prototype, UKRI-MPW1, has been developed to further improve the radiation tolerance of this technology, which is a promising candidate for future high-energy physics experiments. UKRI-MPW1 addresses the issues of high leakage current and parasitic channels identified in its predecessor, UKRI-MPW0, by incorporating an improved chip ring structure and a custom p-shield layer. Additionally, a new pixel flavour with an NMOS-only trimming Digital-to-Analogue Converter (DAC) further improves pixel performance. This chip has demonstrated a radiation tolerance of up to 3 × 1015 neq/cm2.

Item Type:	Article
Uncontrolled Keywords:	Particle tracking detectors (Solid-state detectors), Radiation-hard detectors
Divisions:	Faculty of Science & Engineering Faculty of Science & Engineering > School of Physical Sciences
Depositing User:	Symplectic Admin
Date Deposited:	13 Jan 2025 08:31
Last Modified:	23 May 2026 09:42
DOI:	10.1088/1748-0221/20/01/c01008
Open Access URL:	https://doi.org/10.1088/1748-0221/20/01/C01008
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3189662
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