RD50-MPW4: a thin backside-biased High Voltage CMOS pixel chip for high radiation tolerance



Vilella, E, Bergauer, T, Casanova, R, Handerkas, H, Irmler, C, Kraemer, U, Mandić, I, Marco-Hernández, R, Mazorra de Cos, J, Palomo, FR
et al (show 7 more authors) (2025) RD50-MPW4: a thin backside-biased High Voltage CMOS pixel chip for high radiation tolerance Journal of Instrumentation, 20 (03). C03044-C03044. ISSN 1748-0221, 1748-0221

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Abstract

Abstract The RD50-MPW prototypes are High Voltage-CMOS (HV-CMOS) pixel chips in the 150 nm technology from LFoundry S.r.l. aimed at developing monolithic silicon sensors with excellent radiation tolerance, fast timing resolution and high granularity for tracking applications in future challenging experiments in physics. RD50-MPW4, the latest prototype within this programme, implements significant improvements for a high breakdown voltage (> 400 V), and therefore an excellent radiation tolerance, through a multi-ring structure around the chip edge and substrate backside-biasing to high voltage. Fabricated samples have been irradiated with neutrons up to 1016 neq/cm2 high fluence. Measured current-to-voltage characteristics and pixel equalisation with trimming Digital-to-Analogue Circuits (DACs), to prepare for a test beam with irradiated samples, are presented.

Item Type: Article
Uncontrolled Keywords: Radiation-hard detectors, Front-end electronics for detector readout, Particle tracking detectors (Solid-state detectors)
Divisions: Faculty of Science & Engineering
Faculty of Science & Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 31 Mar 2025 07:49
Last Modified: 28 Feb 2026 12:07
DOI: 10.1088/1748-0221/20/03/c03044
Open Access URL: http://dx.doi.org/10.1088/1748-0221/20/03/C03044
Related Websites:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3191131
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