Enhancing radiation hardness and granularity in HV-CMOS: The RD50-MPW4 sensor



Pilsl, B, Bergauer, T, Casanova, R, Handerkas, H, Irmler, C, Kraemer, U, Marco-Hernandez, R, Cos, J Mazorra de, Palomo, FR, Portschy, S
et al (show 8 more authors) (2025) Enhancing radiation hardness and granularity in HV-CMOS: The RD50-MPW4 sensor NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1080. 170752-. ISSN 0168-9002, 1872-9576

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Abstract

The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the RD50-MPW4, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution — key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a 150 nm CMOS process by LFoundry, it introduces several improvements over its predecessor, the RD50-MPW3, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to 800 V. Tests with non-irradiated samples achieved hit detection efficiencies exceeding 99.9 % and a spatial resolution around 16 μm. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper.

Item Type: Article
Uncontrolled Keywords: RD50-MPW, HV-CMOS, DMAPS, CERN-RD50, Radiation damage
Divisions: Faculty of Science & Engineering
Faculty of Science & Engineering > School of Physical Sciences
Depositing User: Symplectic Admin
Date Deposited: 08 Jul 2025 08:51
Last Modified: 16 Jun 2026 16:57
DOI: 10.1016/j.nima.2025.170752
Related Websites:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3193600
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