A Custom C Band High-Power GaN-Based Rectifier for WPT Systems

Yu, Xiaochen, Wang, Haoran, Liu, Yeke, Huang, Po-Yen, Yen, Ta-Jen, Hsu, Shawn SH, He, Yejun, Song, Chaoyun, Huang, Yi ORCID: 0000-0001-7774-1024 and Zhou, Jiafeng ORCID: 0000-0001-5829-3932 (2025) A Custom C Band High-Power GaN-Based Rectifier for WPT Systems In: 2025 IEEE Wireless Power Technology Conference and Expo (WPTCE), 2025-6-3 - 2025-6-6.

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Abstract

This study presents the development of a 5.8 GHz high-power voltage doubling rectifier for wireless power transfer (WPT) applications, leveraging advanced gallium nitride (GaN) Schottky barrier diode (SBD). The GaN SBD, designed for high-frequency and high-power operation, features a wide bandgap, high electron mobility, and high saturation velocity, ensuring superior performance in microwave power rectification. Key characteristics include a high breakdown voltage larger than 200 V, a low zero-bias junction capacitance of 0.34 pF, a turn-on voltage of 1.25 V, and an on-resistance of 10.5 Ω. These properties enable efficient rectification at the C band. The GaN SBD is integrated into an optimized rectifier circuit featuring a harmonic compression structure to enhance performance, a peak RF-to-DC conversion efficiency of 77.4% is achieved at an input power of 39 dBm. These results highlight the potential of high-power GaN SBDs in advancing high-frequency, high-power WPT systems.

Item Type:	Conference Item (Unspecified)
Uncontrolled Keywords:	rectifier, WPT, GaN, Schottky barrier diode
Divisions:	Faculty of Science & Engineering Faculty of Science & Engineering > School of Electrical Engineering, Electronics and Computer Science
Depositing User:	Symplectic Admin
Date Deposited:	14 Jul 2025 08:10
Last Modified:	23 May 2026 10:23
DOI:	10.1109/WPTCE62521.2025.11062095
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3193702
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