Contrasting properties of free carriers in n - and p -type Sb2Se3

Herklotz, F ORCID: 0000-0002-8705-6917, Lavrov, EV ORCID: 0000-0002-1480-4240, Hobson, TDC ORCID: 0000-0002-0013-360X, Shalvey, TP ORCID: 0000-0002-6008-7561, Major, JD ORCID: 0000-0002-5554-1985 and Durose, K ORCID: 0000-0003-1183-3211 (2025) Contrasting properties of free carriers in n - and p -type Sb2Se3 Applied Physics Letters, 127 (22). p. 222102. ISSN 0003-6951, 1077-3118

Access the full-text of this item by clicking on the Open Access link.

Abstract

We report persistent photoconductivity in p-type Sb2Se3 single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below ∼25 K. Comparative transport and infrared absorption measurements, including on n-type Cl-doped counterparts, reveal strong indications that hole transport in Sb2Se3 is more strongly affected by intrinsic carrier scattering than electron transport. These results point to a fundamental asymmetry in charge carrier dynamics and highlight the potential role of polaronic effects in limiting hole mobility in this quasi-one-dimensional semiconductor.

Item Type:	Article
Uncontrolled Keywords:	51 Physical Sciences, 5104 Condensed Matter Physics
Divisions:	Faculty of Science & Engineering Faculty of Science & Engineering > School of Physical Sciences Faculty of Science & Engineering > School of Physical Sciences > Physics
Depositing User:	Symplectic Admin
Date Deposited:	09 Dec 2025 10:33
Last Modified:	09 Dec 2025 10:33
DOI:	10.1063/5.0298931
Open Access URL:	https://pubs.aip.org/aip/apl/article/127/22/222102...
Related Websites:	Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3196024
Disclaimer:	The University of Liverpool is not responsible for content contained on other websites from links within repository metadata. Please contact us if you notice anything that appears incorrect or inappropriate.