High-Power Dual-Band RF Rectifier With Multifocus GaN Techniques for WPT Applications

Collapse authors list.
Yu, Xiaochen, Wang, Haoran, Lin, Ya-Xun, Yang, Xiantao, Liu, Yeke, Hsu, Shawn SH, Yen, Ta-Jen, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Huang, Yi ORCID: 0000-0001-7774-1024, Zhou, Jiafeng ORCID: 0000-0001-5829-3932 et al (show 2 more authors) , He, Yejun and Song, Chaoyun (2026) High-Power Dual-Band RF Rectifier With Multifocus GaN Techniques for WPT Applications IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 74 (3). pp. 3006-3019. ISSN 0018-9480, 1557-9670

Text High-Power Dual-Band RF Rectifier With Multifocus GaN Techniques for WPT Applications.pdf - Author Accepted Manuscript Available under License Creative Commons Attribution. Download (9MB) | Preview

Abstract

This article presents a spatially adaptive dual-band rectifier leveraging multifocus gallium nitride (GaN) techniques, specifically designed for high-power wireless power transfer (WPT) applications. To address the challenges of watt-level power handling, frequency-specific performance optimization, and high RF-to-dc conversion efficiency, two custom-fabricated GaN Schottky barrier diodes (SBDs) are codesigned with dedicated matching networks for their respective frequency bands. For low-frequency operation at 0.875 GHz, a quasi-vertical GaN-on-Si SBD is developed, achieving a high breakdown voltage of 145 V and a near-ideal ideality factor of 1.03, ensuring both watt-level robustness and high efficiency under low-power excitation, which is particularly critical for sub-GHz IoT scenarios. For high-frequency operation at 5.8 GHz, a GaN-on-SiC SBD with a Y-shaped anode features a breakdown voltage of 205 V and an ultralow junction capacitance of 0.19 pF, extending the cutoff frequency while maintaining excellent power stability. A compact band-optimized matching network incorporating short-circuited stubs enables efficient impedance transformation across both frequency bands. The proposed rectifier achieves a peak RF-to-dc efficiency exceeding 65% at input powers above 6.3 W across both bands. This work addresses the unmet need for rectifiers capable of watt-level RF-to-dc conversion using frequency-specific GaN SBDs. The key contribution lies in the device-circuit codesign of high-power GaN rectifiers, which has not been previously demonstrated.

Item Type:	Article
Uncontrolled Keywords:	Rectifiers, Schottky diodes, Gallium nitride, Radio frequency, Schottky barriers, Optimization, Silicon, Performance evaluation, Impedance, Breakdown voltage, Dual-band rectification, frequency-specific optimization, gallium nitride (GaN) Schottky barrier diode (SBD), high-power RF rectifiers, wireless power transfer (WPT)
Divisions:	Faculty of Science & Engineering Faculty of Science & Engineering > School of Engineering Faculty of Science & Engineering > School of Engineering > Electrical Engineering and Electronics
Depositing User:	Symplectic Admin
Date Deposited:	06 Jan 2026 09:37
Last Modified:	16 Jun 2026 10:49
DOI:	10.1109/TMTT.2025.3637595
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3196374
Disclaimer:	The University of Liverpool is not responsible for content contained on other websites from links within repository metadata. Please contact us if you notice anything that appears incorrect or inappropriate.