Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: The monolithic stitched sensor (MOSS)

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Abdelrahman, O, Rinella, GA, Aglietta, L, Alocco, G, Antonelli, M, Baccomi, R, Barile, F, Becht, P, Benotto, F, Beolè, SM et al (show 90 more authors) , Borri, M, Bortoletto, D, Bouchhar, N, Bruno, GE, Buckland, MD, Bugiel, S, Camerini, P, Carnesecchi, F, Chartier, M, Colella, D, Colelli, A, Contin, G, De Robertis, G, Deng, W, Di Mauro, A, Di Trapani, V, Donner, M, Martin, AD, Dorosz, P, Dumitrache, F, Döpper, L, Eberwein, GH, Elia, D, Emiliani, S, Fabbietti, L, Fagotto, T, Fang, X, Fribert, H, Gernhäuser, R, Giubilato, P, Gonella, L, Grodaas, KG, Groettvik, OS, Gromov, V, Grönbeck, M, Hauer, P, Hillemanns, H ORCID: 0000-0002-6527-1245, Hong, GH, Hu, Y, Hwang, MC, Imhoff, MA, Jacak, B, Jones, DM, Junique, A, Křížek, F, Kaewjai, J, Kaiser, A, Gumprecht, JK, Keil, M, Ketzer, B, Kim, J, Kirchner, L, Kittimanapun, K, Kluge, A, Kobdaj, C, Kotliarov, A, Kugathasan, T, König, M, Rocca, PL, Laojamnongwong, N, Lautner, L, Lemoine, C, Li, L, Liang-Gilman, BE, Licciulli, F, Lim, S, Lim, BH, Liu, J ORCID: 0000-0002-8397-7620, Loddo, F, Lupi, M, Mager, M, Mann, P, Mantzaridis, G, Marras, D, Martinengo, P, Masciocchi, S, Mastroserio, A, Mathew, S, Mattiazzo, S, Menzel, MW, Minafra, N, Morel, F, Mulliri, A, Musa, L, Nambrath, AI, Patra, RN, Panasenko, I, Paniskaki, S, Pantouvakis, C and Pastore, C (2026) Characterisation of the first wafer-scale prototype for the ALICE ITS3 upgrade: The monolithic stitched sensor (MOSS) Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment, 1086. p. 171297. ISSN 0168-9002, 1872-9576

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Abstract

This paper presents the characterisation and testing of the first wafer-scale monolithic stitched sensor (MOSS) prototype developed for the ALICE ITS3 upgrade that is to be installed during the LHC Long Shutdown 3 (2026–2030). The MOSS chip design is driven by the truly cylindrical detector geometry that imposes that each layer is built out of two wafer-sized, bent silicon chips. The stitching technique is employed to fabricate sensors with dimensions of 1.4 cm × 25.9 cm, thinned to 50 μm. The chip architecture, the in-pixel front-end, the laboratory and in-beam characterisation, the susceptibility to single-event effects, and the series testing are discussed. The testing campaign validates the design of a wafer-scale stitched sensor and the performance of the pixel matrix to be within the ITS3 requirements. The MOSS chip demonstrates the feasibility of the ITS3 detector concept and provides insights for further optimisation and development.

Item Type:	Article
Uncontrolled Keywords:	Monolithic active pixel sensors, Solid state detectors, Silicon sensors, CMOS stitching
Divisions:	Faculty of Science & Engineering Faculty of Science & Engineering > School of Physical Sciences Faculty of Science & Engineering > School of Physical Sciences > Physics
Depositing User:	Symplectic Admin
Date Deposited:	30 Jan 2026 10:40
Last Modified:	13 Mar 2026 21:35
DOI:	10.1016/j.nima.2026.171297
Open Access URL:	https://doi.org/10.1016/j.nima.2026.171297
Related Websites:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3196822
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