Hafnia and alumina on sulphur passivated germanium



Althobaiti, M ORCID: 0000-0003-4779-0057, Mather, S, Sedghi, N ORCID: 0000-0002-2004-6159, Dhanak, VR, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036 and Chalker, PR ORCID: 0000-0002-2295-6332
(2015) Hafnia and alumina on sulphur passivated germanium. Vacuum, 122. pp. 306-309.

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Abstract

In this work hafnia (HfO2) and alumina (Al2O3) films were deposited on germanium, using either water or oxygen plasma as the oxidant, by atomic layer deposition at 250 °C with and without sulphur passivation of the substrate. X-ray photoelectron spectroscopy was carried out to investigate the interface between both HfO2 and Al2O3 films and germanium. The results show that for hafnia and alumina deposited with water on pre-sulphur treated germanium there is negligible GeOx formation when compared to films grown using oxygen plasma. The results support the case for sulphur passivation of the interface.

Item Type: Article
Depositing User: Symplectic Admin
Date Deposited: 06 Feb 2017 10:41
Last Modified: 19 Jan 2023 07:37
DOI: 10.1016/j.vacuum.2015.03.017
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3000972

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