Gating of single molecule junction conductance by charge transfer complex formation



Vezzoli, Andrea ORCID: 0000-0002-8059-0113, Grace, Iain, Brooke, Carly, Wang, Kun, Lambert, Colin J, Xu, Bingqian, Nichols, Richard J ORCID: 0000-0002-1446-8275 and Higgins, Simon J ORCID: 0000-0003-3518-9061
(2015) Gating of single molecule junction conductance by charge transfer complex formation. NANOSCALE, 7 (45). pp. 18949-18955.

[thumbnail of TCNE Gating Paper text.docx] Text
TCNE Gating Paper text.docx - Author Accepted Manuscript

Download (10MB)

Abstract

The solid-state structures of organic charge transfer (CT) salts are critical in determining their mode of charge transport, and hence their unusual electrical properties, which range from semiconducting through metallic to superconducting. In contrast, using both theory and experiment, we show here that the conductance of metal |single molecule| metal junctions involving aromatic donor moieties (dialkylterthiophene, dialkylbenzene) increase by over an order of magnitude upon formation of charge transfer (CT) complexes with tetracyanoethylene (TCNE). This enhancement occurs because CT complex formation creates a new resonance in the transmission function, close to the metal contact Fermi energy, that is a signal of room-temperature quantum interference.

Item Type: Article
Uncontrolled Keywords: cond-mat.mes-hall, cond-mat.mes-hall
Depositing User: Symplectic Admin
Date Deposited: 12 Jul 2016 15:39
Last Modified: 19 Jan 2023 07:34
DOI: 10.1039/c5nr04420k
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3002268