Atomic layer deposition of Nb-doped ZnO for thin film transistors

Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Raja, M, Dhanak, VR ORCID: 0000-0001-8053-654X, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036 (2016) Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109 (22). 222103-.

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Official URL: http://dx.doi.org/10.1063/1.4968194

Abstract

<jats:p>We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were deposited using atomic layer deposition. X-ray diffraction measurements indicate that the crystallinity of the NbZnO films reduces with an increase in the Nb content and lower deposition temperature. It was confirmed using X-ray photoelectron spectroscopy that Nb5+ is present within the NbZnO matrix. Furthermore, photoluminescence indicates that the band gap of the ZnO increases with a higher Nb content, which is explained by the Burstein-Moss effect. For TFT applications, a growth temperature of 175 °C for 3.8% NbZnO provided the best TFT characteristics with a saturation mobility of 7.9 cm2/Vs, the current On/Off ratio of 1 × 108, and the subthreshold swing of 0.34 V/decade. The transport is seen to follow a multiple-trap and release mechanism at lower gate voltages and percolation thereafter.</jats:p>

Item Type:	Article
Depositing User:	Symplectic Admin
Date Deposited:	18 Oct 2016 10:57
Last Modified:	15 Mar 2024 03:08
DOI:	10.1063/1.4968194
Related URLs:	Author Publisher
URI:	https://livrepository.liverpool.ac.uk/id/eprint/3003799