Atomic layer deposition of Nb-doped ZnO for thin film transistors



Shaw, A, Wrench, JS, Jin, JD, Whittles, TJ, Mitrovic, IZ, Raja, M, Dhanak, VR, Chalker, PR and Hall, S
(2016) Atomic layer deposition of Nb-doped ZnO for thin film transistors. APPLIED PHYSICS LETTERS, 109 (22). 222103-.

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Abstract

<jats:p>We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were deposited using atomic layer deposition. X-ray diffraction measurements indicate that the crystallinity of the NbZnO films reduces with an increase in the Nb content and lower deposition temperature. It was confirmed using X-ray photoelectron spectroscopy that Nb5+ is present within the NbZnO matrix. Furthermore, photoluminescence indicates that the band gap of the ZnO increases with a higher Nb content, which is explained by the Burstein-Moss effect. For TFT applications, a growth temperature of 175 °C for 3.8% NbZnO provided the best TFT characteristics with a saturation mobility of 7.9 cm2/Vs, the current On/Off ratio of 1 × 108, and the subthreshold swing of 0.34 V/decade. The transport is seen to follow a multiple-trap and release mechanism at lower gate voltages and percolation thereafter.</jats:p>

Item Type: Article
Uncontrolled Keywords: 40 Engineering, 4016 Materials Engineering, 4018 Nanotechnology
Depositing User: Symplectic Admin
Date Deposited: 18 Oct 2016 10:57
Last Modified: 20 Jun 2024 23:02
DOI: 10.1063/1.4968194
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3003799