Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Jin, J, Wrench, J, Gibbon, JT ORCID: 0000-0003-1548-0791, Hesp, D, Shaw, AP, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Sedghi, N ORCID: 0000-0002-2004-6159, Phillips, LJ ORCID: 0000-0001-5181-1565, Zou, J, Dhanak, VR ORCID: 0000-0001-8053-654X
et al (show 2 more authors) (2017) Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition. IEEE Transactions on Electron Devices, 64 (3). pp. 1225-1230.

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Enhancement of the properties of zinc oxide (ZnO)-based Schottky diodes has been explored using a combination of plasma-enhanced atomic layer deposition (PE-ALD) ZnO thin films and silver oxide Schottky contacts deposited by reactive radio-frequency sputtering. The electrical properties of the ZnO thin films were systematically tuned by varying the deposition temperature and oxygen plasma time during PE-ALD to optimize the performance of the diode. Low temperature (80 °C) coupled with relatively long oxygen plasma time (>30 s) PE-ALD is the key to produce ZnO films with net doping concentration lower than 10 17 cm -3 . Under the optimal deposition conditions identified, the diode shows an ideality factor of 1.33, an effective barrier height of 0.80 eV, and an ON/OFF ratio of 3.11 × 10 5 .

Item Type: Article
Uncontrolled Keywords: Zinc oxide, II-VI semiconductor materials, Schottky diodes, Plasma temperature, Temperature, Schottky barriers
Depositing User: Symplectic Admin
Date Deposited: 02 Feb 2017 12:03
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/TED.2016.2647284
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