Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors



Shaw, A, Whittles, TJ ORCID: 0000-0002-5154-7511, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Jin, JD, Wrench, JS, Hesp, D, Dhanak, VR ORCID: 0000-0001-8053-654X, Chalker, PR ORCID: 0000-0002-2295-6332 and Hall, S ORCID: 0000-0001-8387-1036
(2015) Physical and Electrical Characterization of Mg-Doped ZnO Thin-Film Transistors. In: ESSDERC 2015 - 45th European Solid-State Device Research Conference, 2015-9-14 - 2015-9-18, Graz, Austria.

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Abstract

The effect of Mg-doping on the valence and conduction bands of ZnO grown at 200 °C using atomic layer deposition has been investigated using a range of physical characterization techniques: X-ray photoemission spectroscopy, inverse photoemission spectroscopy and spectrocopic ellipsometry. The conduction band minimum is seen to increase with Mg content hence confirming the increased band gap. The physical characterization has been linked with modeling of thin-film transistor structures whereby a defect state based model has been employed to explain the transport mechanisms within the film.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: Zinc Oxide (ZnO), Mg doped ZnO (MgZnO), thin-film transistors (TFTs), Modeling, X-ray photoemission spectroscopy (XPS), inverse photoemission spectroscopy (IPES), Ellipsometry
Depositing User: Symplectic Admin
Date Deposited: 15 Feb 2017 11:07
Last Modified: 07 Jun 2024 22:23
DOI: 10.1109/essderc.2015.7324751
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3005784