Aluminium doped Ga2O3 for GaN MIS-HEMTs

Jones, L ORCID: 0000-0002-4654-3882, Gibbon, JT ORCID: 0000-0003-1548-0791, Roberts, JW, Cho, SJ, Thayne, IG, Chalker, PR ORCID: 0000-0002-2295-6332, Dhanak, VR and Mitrovic, IZ ORCID: 0000-0003-4816-8905
(2018) Aluminium doped Ga2O3 for GaN MIS-HEMTs. In: 20th Workshop on Dielectrics in Microelectronics – WODIM 2018, 2018-6-11 - 2018-6-14, Berlin, Germany.

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Date Deposited: 25 Apr 2018 09:10
Last Modified: 19 Jan 2023 06:35