Development of a silicon bulk radiation damage model for Sentaurus TCAD



Folkestad, A, Akiba, K, van Beuzekom, M, Buchanan, E, Collins, P, Dall'Occo, E, Di Canto, A, Evans, T, Lima, V Franco ORCID: 0000-0002-3761-209X, Garcia Pardinas, J
et al (show 4 more authors) (2017) Development of a silicon bulk radiation damage model for Sentaurus TCAD. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 874. pp. 94-102.

Access the full-text of this item by clicking on the Open Access link.

Abstract

This article presents a new bulk radiation damage model for p-type silicon for use in Synopsys Sentaurus TCAD. The model is shown to provide agreement between experiment and simulation for the voltage dependence of the leakage current and the charge collection efficiency, for fluences up to 8×10151MeVneq∕cm2.

Item Type: Article
Uncontrolled Keywords: Silicon sensor, Silicon pixel detector, Radiation damage, TCAD, Device simulation
Depositing User: Symplectic Admin
Date Deposited: 11 Feb 2019 13:47
Last Modified: 19 Jan 2023 01:04
DOI: 10.1016/j.nima.2017.08.042
Open Access URL: https://doi.org/10.1016/j.nima.2017.08.042
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3032651