Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation



Zhao, TS, Zhao, C, Zhao, CZ, Xu, WY, Yang, L, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Lim, EG ORCID: 0000-0003-0199-7386 and Yu, SC
(2019) Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.

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Abstract

In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V-1·s-1 from 30 samples, which is a promising result for future applications.

Item Type: Conference or Workshop Item (Unspecified)
Uncontrolled Keywords: component, TFT, solution process, InO, Li incorporation
Depositing User: Symplectic Admin
Date Deposited: 18 Feb 2019 09:48
Last Modified: 15 Mar 2024 03:07
DOI: 10.1109/eurosoi-ulis45800.2019.9041879
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3032960