Zhao, TS, Zhao, C, Zhao, CZ, Xu, WY, Yang, L, Mitrovic, IZ ORCID: 0000-0003-4816-8905, Hall, S ORCID: 0000-0001-8387-1036, Lim, EG ORCID: 0000-0003-0199-7386 and Yu, SC
(2019)
Eco-Friendly, Low-temperature Solution-processed InO/AlO Thin-film Transistor with Li-incorporation.
In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019-4-1 - 2019-4-3, Grenoble, France.
Text
Zhao et al-EUROSOI-ULIS 2019.pdf - Author Accepted Manuscript Download (621kB) |
Abstract
In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm2·V-1·s-1 from 30 samples, which is a promising result for future applications.
Item Type: | Conference or Workshop Item (Unspecified) |
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Uncontrolled Keywords: | component, TFT, solution process, InO, Li incorporation |
Depositing User: | Symplectic Admin |
Date Deposited: | 18 Feb 2019 09:48 |
Last Modified: | 15 Mar 2024 03:07 |
DOI: | 10.1109/eurosoi-ulis45800.2019.9041879 |
Related URLs: | |
URI: | https://livrepository.liverpool.ac.uk/id/eprint/3032960 |