Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric



Shen, Zongjie, Qi, Yanfei, Mitrovic, Ivona Z ORCID: 0000-0003-4816-8905, Zhao, Cezhou, Hall, Steve ORCID: 0000-0001-8387-1036, Yang, Li, Luo, Tian, Huang, Yanbo and Zhao, Chun
(2019) Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric. MICROMACHINES, 10 (7). E446-.

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Abstract

Resistive random access memory (RRAM) devices with Ni/AlO<sub>x</sub>/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO<sub>x</sub>) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25 °C. The devices displayed typical bipolar resistive switching characteristics. Investigations were carried out on the effect of different annealing temperatures for associated RRAM devices to show that performance was correlated with changes of hydroxyl group concentration in the AlO<sub>x</sub> thin films. The annealing temperature of 250 °C was found to be optimal for the dielectric layer, exhibiting superior performance of the RRAM devices with the lowest operation voltage (<1.5 V), the highest ON/OFF ratio (>10<sup>4</sup>), the narrowest resistance distribution, the longest retention time (>10<sup>4</sup> s) and the most endurance cycles (>150).

Item Type: Article
Uncontrolled Keywords: bipolar resistive switching characteristics, annealing temperatures, solution-based dielectric, resistive random access memory (RRAM)
Depositing User: Symplectic Admin
Date Deposited: 05 Aug 2019 14:34
Last Modified: 30 Jan 2024 08:35
DOI: 10.3390/mi10070446
Related URLs:
URI: https://livrepository.liverpool.ac.uk/id/eprint/3050206

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