Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates

Terzo, Stefano, Benoit, Mathieu, Cavallaro, Emanuele, Casanova, Raimon, Foerster, Fabian, Grinstein, Sebastian, Iacobucci, Giuseppe, Peric, Ivan, Puigdengoles, Carles and Vilella, Eva
(2019) Radiation hard Depleted Monolithic Active Pixel Sensors with high-resistivity substrates. In: Topical Workshop on Electronics for Particle Physics, 2018-9-17 - ?.

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High Voltage/High resistivity Depleted Monolithic Active Pixel Sensors (HV/HR-DMAPS) is a technology which is becoming of great interest for high energy physics applications. With respect to hybrid pixel detectors, the monolithic approach offers the main advantages of reduced material budget and production costs due to the absence of the bump bonding process. This aspect is important especially when large areas need to be covered as in the tracking detectors of the LHC experiments. Thus, the possibility of employing this technology in the outermost layers of the upgraded ATLAS pixel detector at the HL-LHC is being investigated. Different HR/HV-DMAPS prototypes have been recently developed for the future ATLAS Inner Tracker (ITk) with the aim of studying their radiation hardness and the feasibility of producing large area devices. The H35DEMO is a large area demonstrator chip for the ITk designed by KIT, IFAE and University of Liverpool and produced in the AMS 350 nm HV-CMOS technology with an engineering run on four different substrate resistivities: 20, 80, 200 and 1000 Ωcm. It consists of four large matrices, two of which include digital electronics and are thus fully monolithic. All matrices feature pixels with a size of (50 × 250) µm2 in which the analog electronics is embedded in a Deep N-WELL (DNWELL) also acting as the collecting electrode. H35DEMO chips with a resistivity of 200 Ωcm were irradiated with reactor neutrons to a particle fluence of 1 ×1015 1 MeV neq/cm2, the expected fluence for the outermost pixel layer of ITk. The monolithic CMOS matrix of the H35DEMO chip, called CMOS matrix, was extensively characterised before and after irradiation in beam tests at Fermilab and DESY, with proton and electron beams, respectively. Results after irradiation show good performance in terms of the hit detection efficiency with thresholds of about 1800 e and a bias voltage of 150 V. Another production of monolithic HV-CMOS prototypes in LFoundry 150 nm technology (LF2) has been recently completed. It includes sensors with a similar DNWELL concept as the H35DEMO but with a smaller pixel size of (50 × 50) µm2. Preliminary measurements of leakage current of the LF2 chips were performed showing good agreement with what was expected from the foundry process.

Item Type: Conference or Workshop Item (Unspecified)
Depositing User: Symplectic Admin
Date Deposited: 05 Dec 2019 16:22
Last Modified: 17 Mar 2024 05:52
DOI: 10.22323/1.343.0125
Open Access URL: https://pos.sissa.it/343/125/pdf
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URI: https://livrepository.liverpool.ac.uk/id/eprint/3065014