Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters

Cui, Miao, Sun, Ruize, Bu, Qinglei, Liu, Wen, Wen, Huiqing, Li, Ang, Liang, Yung C and Zhao, Cezhou
(2019) Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. IEEE ACCESS, 7. pp. 184375-184384.

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This paper presents a GaN based synchronous buck DC-DC converter, which monolithically integrates gate drivers and a half-bridge power stage in a 3- $\mu \text{m}$ enhancement-mode (E-mode) GaN-on-Si process. The fabricated synchronous converter with integrated gate drivers is based on E-mode GaN MIS-HFETs (metal-insulator-semiconductor heterojunction-field-effect-transistors), which have a large gate swing of 10 V due to the insertion of 20 nm high-k gate insulator Al2O3. At 100 kHz, the proposed DC-DC integrated circuits (ICs) exhibit good thermal stability at high temperatures up to 250 °C for 25 V down conversion. Furthermore, four different designs (asynchronous and synchronous) including converters with external drivers were systematically evaluated at different input voltages and duty cycles, the GaN-based DC-DC converters with integrated gate drivers exhibit small voltage overshoots and oscillations due to reduced parasitic inductance and chip size. These results validate the advantages of monolithic, lateral integration of half-bridge GaN ICs with gate drivers for high temperature power converters.

Item Type: Article
Uncontrolled Keywords: Gallium nitride, Transistors, Logic gates, Gate drivers, Buck converters, Integrated circuits, Power transistors, GaN integration circuits (ICs), high temperature operations, integrated gate drivers, synchronous and asynchronous dc-dc buck converters
Depositing User: Symplectic Admin
Date Deposited: 29 Sep 2020 09:43
Last Modified: 15 Mar 2024 12:15
DOI: 10.1109/ACCESS.2019.2958059
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